Components

Ambition Demands Laser Precision

Compound Photonics has the expertise, proven processes and manufacturing scale to deliver. Our team of dedicated engineers, process experts and technicians is committed to building long- term partnerships with our customers.

You demand the exacting precision and robust manufacturing scale that only a best-in-class GaAs fab can provide. Located in Newton Aycliffe, UK, our GaAs foundry is one of the largest in the world—offering best-in-class semiconductor fabrication services to leading defense, aerospace, automotive and telecom firms since 1999.

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Advanced pHEMT MMIC Processes

Our technically advanced 0.25μm stepper-based, six inch semiconductor pHEMT processes are optimized for flexible and efficient high yield processing from prototype runs to high volume production. All of our technology and service offerings are supported by an ISO 9001 accredited quality system

  • Material growth

  • pHEMT MMIC process fabrication

  • DC and RF On Wafer (RFOW) testing

  • Die singulation and processing

  • Visual inspection(automated wafer, automated singulated die and manual metallurgical microscope)

  • Engineering support services

    • Wire bonding

    • Failure analysis

    • Reliability testing

    • Die pick and place

    • Die bonding

GaAs Custom Foundry Services

GaAs LOW NOISE pHEMT

  • 0.25μm power MMIC pHEMT process technology

  • fT=50GHz

  • Drain voltage up to 7V

  • Through wafer via

  • TaN precision resistors

  • Capacitor densities of 200, 390, and 780pF/mm2

  • Two interconnect metal layers-2.1 and 4.1μm of Au with air bridge crossovers

  • Provides low noise, medium power, and high linearity for applications including

    • Low-noise

    • Transmitter frontends MMIC’s

GaAs HIGH POWER pHEMT

  • 0.3μm power MMIC pHEMT process technology

  • fT = 40GHz

  • Drain voltage up to 10V

  • Through wafer vias TaN precision resistors

  • Capacitor densities of 200 and 550 pF/mm2

  • Two interconnect metal layers-2.1 and 4.1μm of Au with air bridge crossovers

  • Applications include military radar and EW

GaAs SWITCHING pHEMT 

  • 0.6μm switch pHEMT process technology

  • Capacitor density of 295pF/mm2

  • Two interconnect metal layers-0.4 and 2.1μm of Au with dielectric crossovers

  • Provides low noise, high-linearity switching of RF signals for applications

  • Cellular handsets

  • Antenna switching

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